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study of aln gan hemts

Study of AlN/GaN HEM...

Study of AlN/GaN HEMTs

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DC, microwave, noise...

DC, microwave, noise, and degradation properties of GaN based HEMTs

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Studies of MBE-Grown...

Studies of MBE-Grown Single and Multiple AlN/GaN Heterojunctions

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1.5 µm GaN/AlN MQWs...

1.5 µm GaN/AlN MQWs Intersubband All-Optical Switches

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GaN HEMT Modeling and Design for mm and sub-mm Wave Power Amplifiers

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GaN-based Semiconductor Devices

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Synthesis and modifications of GaN by ion beams

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Theoretical Study of...

Theoretical Study of Electron Transport Characteristics in GaN

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Электрическая розетка Aln 86

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Symphonized ALN Red

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Electron Transport In Bulk n-GaN And In Heterojunction Of AlGaN/GaN

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Design of Capacitorless Memory Cell based on GaN Heterostructures

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ZnO and GaN Devices for Nanophotonic and Microelectronic Applications

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Growth & Mechanisms of Rare-Earth-doped GaN Electroluminescent Devices

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Symphonized ALN Green

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Лосьон Gan Nike baby BabyGanics 502ml

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Для информации:

The large polarization difference between AlN and GaN provides extremely high electron densities at the heterointerface covered by only 3-4 nm AlN barrier, which makes AlN/GaN heterojunction the ultimate nitride structure for high-frequency applications. This work includes the systematic study of the MBE growth of AlN/GaN HEMTs, theoretical study of 2DEG scattering mechanisms, and device issues of in-situ buffer leakage removal with polarization engineering and decreasing contact resistance with band diagram engineering. This book shows the approach to achieve the record high 2DEG density (5e13/cm2) and the record-low sheet resistance (128 ohm/sq) in high-quality AlN/GaN HEMTs. As a theoretical study, electron scattering mechanisms are reviewed in this book. A novel scattering mechanism, remote surface roughness scattering, is proposed. Large buffer leakage and ohmic contact resistance are two factors that heavily degrade high-speed device performance. Polarization engineering was applied in the buffer leakage study, which increased the ON/OFF ratio by >4 orders. Regrown Si-doped GaN and graded InGaN/InN contacts have been demonstrated with a comprehensive X-ray diffraction study.